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rev 3 december 2005 1/14 14 STP95N04 std95n04 n-channel 40v - 5.4m ? - 80a - dpak - to-220 stripfet? power mosfet general features standard threshold drive 100% avalanche tested description this n-channel enhancement mode mosfet is the latest refinement of stmicroelectronic unique ?single feature size?? strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge . applications high current,switching application automotive order codes internal schematic diagram type v dss r ds(on) i d pw std95n04 STP95N04 40v 40v <6.5m ? <6.5m ? 80a 80a 110w 110w dpak 1 3 1 2 3 to-220 sales type marking package packaging std95n04 d95n04 dpak tape & reel STP95N04 p95n04 to-220 tube www.st.com
1 electrical ratings std95n04 - STP95N04 2/14 1 electrical ratings table 1. absolute maximum ratings table 2. thermal data symbol parameter value unit v ds drain-source voltage (v gs =0) 40 v v gs gate-source voltage 20 v i d note 1 drain current (continuous) at t c = 25c 80 a i d drain current (continuous) at t c = 100c 65 a i dm note 2 drain current (pulsed) 320 a p tot total dissipation at t c = 25c 110 w derating factor 0.73 w/c dv/dt note 3 peak diode recovery voltage slope 8 v/ns e as note 4 single pulse avalanche energy 400 mj t j t stg operating junction temperature storage temperature -55 to 175 c to-220 dpak rthj-case thermal resistance junction-case max 1.36 c/w rthj-a thermal resistance junction-ambient max 62.5 -- c/w rthj-pcb note 5 thermal resistance junction-ambient max -- 50 c/w t l maximum lead temperature for soldering purpose 300 -- c
std95n04 - STP95N04 2 electrical characteristics 3/14 2 electrical characteristics (t case = 25 c unless otherwise specified) table 3. on/off states table 4. dynamic symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 40a 5.4 6.5 m ? symbol parameter test conditions min. typ. max. unit g fs note 6 forward transconductance v ds =25v, i d =40a 100 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 2200 580 40 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =20v, i d = 80a v gs =10v (see figure 13) 40 11 8 54 nc nc nc
2 electrical characteristics std95n04 - STP95N04 4/14 table 5. switching times table 6. source drain diode (1) current limited by package (2) pulse width limited by safe operating area (3) i sd 80 a, di/dt 400a/s, v ds v (br)dss, tj tjmax (4) starting tj=25c, id =40a, vdd=30v (5) when mounted on 1inch2 fr4 2oz cu board (6)pulsed: pulse duration = 300s, duty cycle 1.5% symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =20v, i d = 40a, r g =4.7 ?, v gs =10v (see figure 12) 15 50 ns ns t d(off) t f turn-off delay time falltime v dd =20v, i d = 40a, r g =4.7 ?, v gs =10v (see figure 12) 40 15 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm note 2 source-drain current source-drain current (pulsed) 80 320 a a v sd note 6 forward on voltage i sd =80a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =80a, di/dt = 100a/s, v dd =30v, tj=150c 45 60 2.8 ns nc a
std95n04 - STP95N04 2 electrical characteristics 5/14 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. static drain-source on resistance figure 6. normalized bvdss vs temperature
2 electrical characteristics std95n04 - STP95N04 6/14 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
std95n04 - STP95N04 3 test circuits 7/14 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform figure 17. switching time waveform
3 test circuits std95n04 - STP95N04 8/14 figure 18. diode reverse recovery waveform
std95n04 - STP95N04 4 package mechanical data 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
4 package mechanical data std95n04 - STP95N04 10/14 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
std95n04 - STP95N04 4 package mechanical data 11/14 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
5 packing mechanical data std95n04 - STP95N04 12/14 5 packing mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std95n04 - STP95N04 6 revision history 13/14 6 revision history date revision changes 24-oct-2005 2 inserted ecopack indication 07-dec-2005 3 complete version
6 revision history std95n04 - STP95N04 14/14 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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